Pseudopotential calculations of electronic properties of Ga1−xInxN alloys with zinc-blende structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. GaN, AlN, and InN: A review
2. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
3. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
4. Donor acceptor pair in molecular beam epitaxy grown GaN
5. Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
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