Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux-Reference-Cited by-同舟云学术

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Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Published:1998-12-01 Issue:12 Volume:13 Page:1469-1471
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Foxon C T,Hooper S E,Cheng T S,Orton J W,Ren G B,Ber B Ya,Merkulov A V,Novikov S V,Tret'yakov V V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Emerging gallium nitride based devices

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of Ge and In addition on the phase formation of CoCrCuFeNi high-entropy alloy thin films;Thin Solid Films;2016-10

2. Controlling the compositional inhomogeneities in AlxGa1−xN/AlyGa1−yN MQWs grown by PA-MBE: Effect on luminescence properties;Journal of Crystal Growth;2016-04

3. Experimental and theoretical investigation on the structural properties of GaN grown on sapphire;Applied Physics Letters;2003-10-13

4. Novel Synthesis of Nanocrystalline Gallium Nitride Powder from Gallium(III)-Urea Complex;Chemistry Letters;2003-08

5. RETRACTED: Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells;Materials Science and Engineering: B;2003-01

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