Donor acceptor pair in molecular beam epitaxy grown GaN-Reference-Cited by-同舟云学术

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Donor acceptor pair in molecular beam epitaxy grown GaN

Published:1997-01 Issue:1-3 Volume:43 Page:242-245
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ren G.B.,Dewsnip D.J.,Lacklison D.E.,Orton J.W.,Cheng T.S.,Foxon C.T.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. Donor-acceptor pair recombination in GaN

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1. Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface;Nano Express;2021-03-01

2. Wavelength tuning in the purple wavelengths using strain-controlled AlxGa1–xN/GaN disk-in-wire structures;Applied Physics Letters;2020-01-27

3. Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si;Japanese Journal of Applied Physics;2006-04-07

4. Photoluminescence of mechanically polished ZnO;Journal of Applied Physics;2005-02-15

5. Defect-related luminescence of GaN:Zn films thermally treated in a radio-frequency ammonia plasma;Semiconductors;2003-11

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