Luminescence of an InGaN/GaN multiple quantum well light-emitting diode-Reference-Cited by-同舟云学术

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Luminescence of an InGaN/GaN multiple quantum well light-emitting diode

Published:2000-06 Issue:6 Volume:44 Page:1055-1058
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sheu J.K,Chi G.C,Su Y.K,Liu C.C,Chang C.M,Hung W.C,Jou M.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases

5. High-transparency Ni/Au ohmic contact to p-type GaN

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3. Nanosecond pulsed-bias-actuated and exciton-dynamics-induced chirp in InGaN/GaN LEDs towards realizing electrically-tunable broadband light emitters;Journal of Luminescence;2021-01

4. Near-ultraviolet chip-based phosphor-converted solar-spectrum white light-emitting diode;Optical Engineering;2020-01-21

5. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

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