Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369188
Reference11 articles.
1. III-V nitrides for electronic and optoelectronic applications
2. Reactive ion etching of GaN using BCl3
3. High temperature electron cyclotron resonance etching of GaN, InN, and AlN
4. Inductively coupled plasma etching of GaN
5. Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides
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