An improved physics-based 1/f noise model for deep sub-micron MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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4. Noise in solid-state microstructures: a new perspective on individual defects, interface states, and low-frequency noise;Kirton;Adv Phys,1989
5. Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs;Amarasinghe;Solid-State Electron,2000
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