Energetic mapping of oxide traps in MoS 2 field-effect transistors-Reference-Cited by-同舟云学术

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Energetic mapping of oxide traps in MoS 2 field-effect transistors

Published:2017-06-08 Issue:2 Volume:4 Page:025108
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Illarionov Yury Yu,Knobloch Theresia,Waltl Michael,Rzepa Gerhard,Pospischil Andreas,Polyushkin Dmitry K,Furchi Marco M,Mueller Thomas,Grasser Tibor

Funder

Austrian Science Fund

Graphene Flagship

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa734a/pdf

Reference66 articles.

1. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

2. Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

3. Single-layer MoS2 transistors

4. High Performance Multilayer MoS2 Transistors with Scandium Contacts

5. Velocity saturation in few-layer MoS2 transistor

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3. Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs;npj 2D Materials and Applications;2024-07-14

4. The future of two-dimensional semiconductors beyond Moore’s law;Nature Nanotechnology;2024-07

5. Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETs;Advanced Electronic Materials;2024-06-21

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