Temperature-dependence of steady-state characteristics of SCR-type ESD protection circuits
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
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4. Cascoded LVTSCR with tunable holding voltage for ESD protection in bulk CMOS technology without latchup danger;Ker;Solid-State Electron,2000
5. Novel diode-chain triggering SCR circuits for ESD protection;Jang;Solid-State Electron,2000
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1. Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs;Engineering Reports;2023-07-16
2. Effect of high-temperature on holding characteristics in MOSFET ESD protecting device;Acta Physica Sinica;2022
3. Study on the high-temperature triggering and holding characteristics of PDSOI SCR devices;Microelectronics Reliability;2021-11
4. Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures*;Chinese Physics B;2021-07-01
5. New Diode-Triggered Silicon-Controlled Rectifier for Robust Electrostatic Discharge Protection at High Temperatures;IEEE Transactions on Electron Devices;2019-04
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