Conduction-band deformation effect on stress-induced leakage current
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
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1. Stress‐induced leakage current in CNT‐MOSFETs using simplified quantitative model;Electronics Letters;2013-01
2. Modeling the stress-induced leakage current origin from antisite defects in MOSFETs;2007 IEEE Workshop on Microelectronics and Electron Devices;2007-04
3. Simplified quantitative stress-induced leakage current (SILC) model for MOS devices;MICROELECTRON RELIAB;2006
4. Simplified quantitative stress-induced leakage current (SILC) model for MOS devices;Microelectronics Reliability;2006-02
5. Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization;The European Physical Journal Applied Physics;2004-06-25
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