Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2004157/pdf
Reference54 articles.
1. Modeling of current-voltage characteristics of metal/ultra-thin oxide/semiconductor structures
2. Two-dimensional numerical analysis of floating-gate EEPROM devices
3. Determination of trapped oxide charge in flash-type EEPROMs with heavily oxynitrided tunnel oxide films
4. Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2
5. Dielectric breakdown in electrically stressed thin films of thermal SiO2
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