Stress‐induced leakage current in CNT‐MOSFETs using simplified quantitative model
Author:
Affiliation:
1. Department of Engineering Physics and MathematicsFaculty of EngineeringAin Shams UniversityEgypt
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2012.3847
Reference7 articles.
1. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
2. Conduction‐band deformation effect on stress‐induced leakage current;Duan X.;Solid‐State Electron.,2000
3. Simplified quantitative stress induced leakage current (SILC) model for MOS‐devices;Ossaimee M.;Microelectron. Reliab,2006
4. Experimental evidence of inelastic tunneling in stress‐induced leakage current;Takagi S.;IEEE Trans. Electron Devices,1999
5. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
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