High breakdown M–I–M structures on bulk AlN-Reference-Cited by-同舟云学术

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High breakdown M–I–M structures on bulk AlN

Published:2002-04 Issue:4 Volume:46 Page:573-576
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Luo B,Johnson J.W,Kryliouk O,Ren F,Pearton S.J,Chu S.N.G,Nikolaev A.E,Melnik Yu.V,Dmitriev V.A,Anderson T.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. GaN: Processing, defects, and devices

2. Applications Of High Power Electronic Switches In The Electric Power Utility Industry And The Needs For High Power Switching Devices

3. Fabrication and performance of GaN electronic devices

4. High voltage (450 V) GaN Schottky rectifiers

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1. Mechanism for the hydrolysis resistance of aluminum nitride powder modified by boric acid;Ceramics International;2022-11

2. Optimizing Hydrolysis Resistance and Dispersion Characteristics via Surface Modification of Aluminum Nitride Powder Coated with PVP-b-P(St-alt-ITA) Copolymer;Molecules;2022-04-11

3. Non hydrolizable aluminum nitride powders surface modified by silicic acids;Ceramics International;2021-10

4. A study on the thermal oxidation process of bulk AlN single crystal grown by PVT;J KOR CRYST GROWTH C;2020

5. Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition;Surface and Coatings Technology;2018-08

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