Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition-Reference-Cited by-同舟云学术

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Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

Published:2018-08 Issue: Volume:347 Page:181-190
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Tian L.,Ponton S.,Benz M.,Crisci A.,Reboud R.,Giusti G.,Volpi F.,Rapenne L.,Vallée C.,Pons M.,Mantoux A.,Jiménez C.,Blanquet E.

Funder

Investments for the Future

EuCARD-2

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference37 articles.

1. Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy;Coudurier;Phys. Status Solidi C,2013

2. Application of aluminum nitride films for electronic devices;Belyanin;Diam. Relat. Mater.,1999

3. III–V nitrides for electronic and optoelectronic applications;Davis;Proc. IEEE,1991

4. Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor PhaseEpitaxy;Kinoshita;Appl. Phys. Express,2012

5. Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition;Vispute;J. Appl. Phys.,1995

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3. Efforts of implementing ultra‐flexible thin‐film encapsulation for optoelectronic devices based on atomic layer deposition technology;SmartMat;2024-04-16

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