Schottky rectifiers fabricated on free-standing GaN substrates-Reference-Cited by-同舟云学术

Schottky rectifiers fabricated on free-standing GaN substrates

Published:2001-03 Issue:3 Volume:45 Page:405-410
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Johnson J.W.,LaRoch J.R.,Ren F.,Gila B.P.,Overberg M.E.,Abernathy C.R.,Chyi J.-I.,Chuo C.C.,Nee T.E.,Lee C.M.,Lee K.P.,Park S.S.,Park Y.J.,Pearton S.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Fabrication and performance of GaN electronic devices

2. GaN based transistors for high power applications

3. Performance evaluation of high-power wide band-gap semiconductor rectifiers

4. Editorial

5. High voltage (450 V) GaN Schottky rectifiers

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation;Japanese Journal of Applied Physics;2023-09-15

2. Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage;Applied Physics Letters;2022-11-14

3. Influence of surface trap states on RF/microwave performance of lateral AlGaN/GaN Schottky barrier diode;Journal of Electromagnetic Waves and Applications;2021-07-22

4. Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel;Journal of Electronic Materials;2021-07-05

5. Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs);Electronics;2019-05-24