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RF performance of HVPE-grown AlGaN/GaN HEMTs

  • Published:2004-01 Issue:1 Volume:48 Page:179-182
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Mastro M.A.,Tsvetkov D.,Soukhoveev V.,Usikov A.,Dmitriev V.,Luo B.,Ren F.,Baik K.H.,Pearton S.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D Channel Defect States Properties Extraction Using DLTFS in AlGaN/GaN HEMTs;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

2. Assessment of the (010) β-Ga2O3 surface and substrate specification;Journal of Vacuum Science & Technology A;2021-01

3. Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy;Semiconductor Science and Technology;2020-02-01

4. Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices;International Journal of High Speed Electronics and Systems;2019-03

5. Operational frequency degradation induced trapping in scaled GaN HEMTs;Microelectronics Reliability;2017-04
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