Determination of N-polar AlN/GaN heterojunction valance-band offsets by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Determination of N-polar AlN/GaN heterojunction valance-band offsets by X-ray photoelectron spectroscopy

Published:2018-11 Issue: Volume:230 Page:135-138
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Du Jin-Juan,Xu Sheng-Rui,Zhang Jin-Cheng,Li Pei-Xian,Lin Zhi-Yu,Zhao Ying,Peng Ruo-Shi,Fan Xiao-Meng,Tao Hong-Chang,Hao Yue

Funder

The National Key R&D Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. GaN, AlN, and InN: A review

2. Prospects for device implementation of wide band gap semiconductors

3. InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

4. Valence band offset of ZnO∕4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

5. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid functional investigation of band offsets for non-polar, Ga-polar and Al-polar interfaces in GaN/AlN heterojunction;Journal of Physics: Condensed Matter;2020-10-20

2. Optimization of N-polar GaN growth on bulk GaN substrate by MOCVD;Materials Letters;2019-10

3. Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition;Chemistry of Materials;2019-09-09

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