Valence band offset of ZnO∕4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2926679
Reference17 articles.
1. A comprehensive review of ZnO materials and devices
2. Fabrication of n-ZnO:Al∕p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique
3. UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes
4. Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy
5. Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates
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