Fabrication of n-ZnO:Al∕p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1947889
Reference11 articles.
1. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices
2. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
3. Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer
4. Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga
5. Greenish-white electroluminescence from p-type CuGaS[sub 2] heterojunction diodes using n-type ZnO as an electron injector
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