Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Author:

Ma Hong-Ping1,Li Xiao-Xi1,Yang Jia-He1,Cheng Peihong2,Huang Wei1,Zhu Jingtao3ORCID,Jen Tien-Chien4,Guo Qixin5,Lu Hong-Liang1ORCID,Zhang David Wei1

Affiliation:

1. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China

2. School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China

3. Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China

4. University of Johannesburg, Aukland Park, Johannesburg 2006, South Africa

5. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan

Funder

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

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