Controlled synthesis of β-SiC with a novel microwave sintering method-Reference-Cited by-同舟云学术

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Controlled synthesis of β-SiC with a novel microwave sintering method

Published:2019-11 Issue: Volume:255 Page:126586
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Zhan Haijuan,Zhang Na,Wu Dan,Wu Zhiqiang,Bi Shuxian,Ma Baojun^ORCID,Liu Wanyi

Funder

Scientific Research Foundation of Higher Education Institutions of Ningxia

Major Innovation Projects for Building First-class Universities in China’s Western Region

National Natural Science Foundations of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Silicon carbide as a platform for power electronics;Eddy;Science,2009

2. Ultra-fast epitaxial growth of β-SiC films on α (4H)-SiC using hexamethyldisilane (HMDS) at low temperature;Zhang;Ceram. Int.,2016

3. Ab initio study of the lattice stability of β-SiC under intense laser irradiation;Shen;J. Alloys Compd.,2015

4. Properties of GaN grown on Si (111) substrates dependent on the thickness of 3C-SiC intermediate layers;Fang;J. Appl. Phys.,2014

5. Stress and thermal characterization of 4H-SiC microelectromechanical structures;Wells;Mater. Lett.,2017

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4. Preparation of SiC from carbonaceous vanadium-bearing stone coal via carbothermal reduction method;Ceramics International;2024-02

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