Stress and thermal characterization of 4H-SiC microelectromechanical structures

Author:

Wells Colton,Jiang Jheng-Yi,Chang Ting-Fu,Huang Chih-Fang,Ke Jiaxin,Luo Weijun,Xia Guangrui,Cheong Kuan Yew,Zhao Feng

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

2. N. Zhang, C.M. Lin, Y. Rao , A.P. Pisano, D.G. Senesky, Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 2014, 911306.

3. High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

4. S. Rao, G. Pangallo, F. Pezzimenti, F.G. Della Corte, R. Nipoti, AISEM Annual Conference, Trento, Italy, 2015.

5. Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

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