Author:
Wells Colton,Jiang Jheng-Yi,Chang Ting-Fu,Huang Chih-Fang,Ke Jiaxin,Luo Weijun,Xia Guangrui,Cheong Kuan Yew,Zhao Feng
Funder
National Science Foundation
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C
2. N. Zhang, C.M. Lin, Y. Rao , A.P. Pisano, D.G. Senesky, Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 2014, 911306.
3. High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes
4. S. Rao, G. Pangallo, F. Pezzimenti, F.G. Della Corte, R. Nipoti, AISEM Annual Conference, Trento, Italy, 2015.
5. Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献