Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865372
Reference16 articles.
1. Silicon Carbide Microsystems for Harsh Environments
2. Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review
3. Thermistor-like pn junction temperature-sensor with variable sensitivity and its combination with a micro-air-bridge heater
4. CMOS compatible temperature sensor based on the lateral bipolar transistor for very wide temperature range applications
5. A hybrid 6H-SiC temperature sensor operational from 25°C to 500°C
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