Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature-Reference-Cited by-同舟云学术

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Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature

Published:2016-02 Issue:3 Volume:42 Page:4632-4635
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Zhang Song,Xu Qingfang,Hu Zhiying,Zhu Peipei,Tu Rong,Zhang Lianmeng,Han Mingxu,Goto Takashi,Yan Jiasheng,Luo Sijun

Funder

National Natural Science Foundation of China

111 Project

International Science & Technology Cooperation Program of China

Natural Science Foundation of Hubei Province, China

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Role of 3C–SiC intermediate layers for III-nitride crystal growth on Si;Abe;J. Cryst. Growth,2011

2. Properties of surface and interface structure of AlN/3C–SiC/Ge/Si(111) heterostructure;Nader;J. Cryst. Growth,2009

3. Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C–SiC intermediate layers;Fang;J. Appl. Phys.,2014

4. Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films;Cordier;J. Cryst. Growth,2014

5. Growth of large area monolayer graphene on 3C–SiC and a comparison with other SiC polytypes;Yazdi;Carbon,2013

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled synthesis of β-SiC with a novel microwave sintering method;Materials Letters;2019-11

2. Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD;RSC Advances;2019

3. Electrically conducting graphene/SiC(111) composite coatings by laser chemical vapor deposition;Carbon;2018-11

4. Elimination of Voids at Interface of β-SiC Films and Si Substrate by Laser CVD;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2018-04

5. Preparation of silicon carbide coating by chemical vapor deposition by using hexamethyldisilylamine precursor;Surface and Coatings Technology;2018-01

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