Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates-Reference-Cited by-同舟云学术

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Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates

Published:1998-05 Issue:1-2 Volume:321 Page:181-185
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Paul D.J,Ahmed A,Griffin N,Pepper M,Churchill A.C,Robbins D.J,Wallis D.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. CMOS possibilities

2. Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

3. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

4. p-type Ge-channel MODFETs with high transconductance grown on Si substrates

5. SiGe-channel heterojunction p-MOSFET's

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-11

2. The proximity effect of the regrowth interface on two-dimensional electron density in strained Si;Applied Physics Letters;2008-03-17

3. Current conduction mechanism in TiO2 gate dielectrics;Microelectronic Engineering;2005-08

4. Preparation of Phosphorus-Doped Si0.8Ge0.2 Thermoelectric Thin Film Using RF Sputtering with Induction Coil;Journal of the Ceramic Society of Japan;2005

5. Si[sub 1 – ][sub x]Ge[sub x] ∕Si(001) Relaxed Buffer Layers Grown by Chemical Vapor Deposition at Atmospheric Pressure;Physics of the Solid State;2005

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