Current conduction mechanism in TiO2 gate dielectrics-Reference-Cited by-同舟云学术

Current conduction mechanism in TiO2 gate dielectrics

Published:2005-08 Issue:2-4 Volume:81 Page:188-193
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chakraborty S.,Bera M.K.,Bhattacharya S.,Maiti C.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

2. Strained silicon heterostructures: materials and devices;Maiti,2001

3. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy

4. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures

5. Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates

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