Fabrication of Electrospun Porous Tio2 Dielectric Film in Ti–Tio2–Si Heterostructure for Next-Generation Metal–Insulator–Semiconductor Capacitors

Author:

Choi Tae Min,Yoo JinUk,Pyo Sung Gyu

Publisher

Elsevier BV

Reference28 articles.

1. Largely enhanced dielectric properties of polymer composites with HfO2 nanoparticles for hightemperature film capacitors;L Ren;Compos Sci Technol,2021

2. Improving high-temperature energy storage performance of PI dielectric capacitor films through boron nitride interlayer;K Zhang;Adv. Compos. Hybrid Mater,2021

3. Current transport in metal/hafnium oxide/silicon structure;W J Zhu;IEEE Electron Device Lett,2002

4. Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries;O Pirrotta;J. Appl. Phys,2013

5. Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed highk HfO2 gate dielectrics;P Jin;Ceram,2016

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