CMOS possibilities
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates
2. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
3. K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu and B. S. Meyerson, submitted for publication.
4. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
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1. Silicon–Germanium Devices ☆;Reference Module in Materials Science and Materials Engineering;2017
2. Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure;Applied Physics Letters;2010-06-21
3. Enhanced Carrier Mobility for Improved CMOS Performance;Into the Nano Era;2009
4. Heterostructure SiGe/SiGeC MOSFETs;Series in Material Science and Engineering;2007-01-11
5. Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded GexSi1−x (0.3;Materials Science in Semiconductor Processing;2006-08
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