Thermal stability of SrRuO3 epitaxial layers under forming-gas anneal
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors
2. Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films
3. Mechanism of low temperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3 capacitors
4. Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing
5. Epitaxial growth of highly conductive RuO2 thin films on (100) Si
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1. Investigation of time variations of redox reactions in SrRuO3 through interface-sensitive resistance measurements;Journal of Applied Physics;2023-03-28
2. Materials challenges for SrRuO3: From conventional to quantum electronics;APL Materials;2022-09-01
3. Room-temperature reduction at SrRuO3–metal interface in hydrogenous atmosphere detected by interface-sensitive resistance measurement;Journal of Applied Physics;2020-11-07
4. Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy;ACS Nano;2016-01-12
5. Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films;Applied Physics Letters;2015-12-14
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