Degradation mechanism of ferroelectric properties in Pt/Bi4-xLaxTi3O12/Pt capacitors during forming gas annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402640
Reference19 articles.
1. Lanthanum-substituted bismuth titanate for use in non-volatile memories
2. Memories are made of …
3. Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
4. The degradation of ferroelectric properties of PZT thin films due to plasma damage
5. Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors
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3. Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films;Ceramics International;2011-09
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