Characterization of neon implantation damage in silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Separation of silicon wafers by the smart-cut method
2. Cavity formation and impurity gettering in He-implanted Si
3. Gettering of metals by voids in silicon
4. Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures
5. Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates
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2. Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films;Journal of Materials Science;2022-01
3. Ne–He bubble formation in co-implanted Si(111) substrates;Thin Solid Films;2013-12
4. Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering;Journal of Applied Physics;2013-02-28
5. First-principles calculations of helium and neon desorption from cavities in silicon;Journal of Physics: Condensed Matter;2012-04-05
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