Comparative study of polymer based novel organic–inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures-Reference-Cited by-同舟云学术

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Comparative study of polymer based novel organic–inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures

Published:2021-10 Issue: Volume:272 Page:115364
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Khan Ruby,Visvkarma Ajay Kumar,Narang Kapil,Bag Rajesh Kumar,Padmavati M.V.G,Tyagi Renu,Riaz Ufana

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference56 articles.

1. GaN, AlN, and InN: a review;Strite;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,1992

2. High-pressure crystal growth, Thermodynamics and physical properties of AlxGa1-xN semiconductors;Belousov;J. Appl. Phys.,2010

3. the Thermodynamic study on MOVPE growth of group III-Nitrides;Koukitu;Jpn. J. Appl. Phys.,1997

4. Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications;Yu;J. Appl. Phys.,2006

5. Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC;Davydov;J. Appl. Phys.,1997

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