Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement-Reference-Cited by-同舟云学术

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Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement

Published:2015-10 Issue: Volume:200 Page:93-98
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Borysiewicz M.A.,Wzorek M.,Gołaszewska K.,Kruszka R.,Pągowska K.D.,Kamińska E.

Funder

Institute of Electron Technology

European Union within the European Regional Development Fund

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2. Recent Progress in AlGaN-Based Deep-UV LEDs

3. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes;Crystals;2023-03-19

2. GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes;physica status solidi (a);2019-01-02

3. Modification of GaN thin film on sapphire substrate optical properties under weak magnetic fields;Materials Research Express;2018-12-14

4. Co-sputtered Zn1-xMg O films and interfacial band offsets at heterojunctions with SnS-CUB;Journal of Alloys and Compounds;2018-09

5. The influence of an ultrathin Ni interface layer on the performance of GaN-based 380 nm UV LED with sputtered Zn1−xMgxO: Al transparent p-type electrode;Thin Solid Films;2018-03

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