GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes-Reference-Cited by-同舟云学术

GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes

Published:2019-01-02 Issue:4 Volume:216 Page:1800684
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sheikhi Moheb¹²,Xu Houqiang¹²,Jiang Jie'an¹²³,Wu Sudong¹,Yang Xi¹,Yang Zhenhai¹,Liao Mingdun¹,Guo Wei¹,Ye Jichun¹²

Affiliation:

1. Ningbo Institute of Materials Technology and Engineering; Chinese Academy of Sciences; Ningbo Zhejiang 315201 China

2. University of Chinese Academy of Sciences; Beijing 100049 China

3. ShanghaiTech University; Pudong Shanghai 201210 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800684/fullpdf

Reference45 articles.

1. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

2. AlGaN photonics: recent advances in materials and ultraviolet devices

3. Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

4. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

5. Handbook of Transparent Conductors

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