Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence-Reference-Cited by-同舟云学术

Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Published:2018-06-08 Issue:32 Volume:28 Page:1802395
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Guo Wei¹²^ORCID,Sun Haiding³,Torre Bruno⁴,Li Junmei¹,Sheikhi Moheb¹⁵,Jiang Jiean¹⁵,Li Hongwei⁶,Guo Shiping⁶,Li Kuang-Hui³,Lin Ronghui³,Giugni Andrea⁴,Di Fabrizio Enzo⁴,Li Xiaohang³,Ye Jichun¹

Affiliation:

1. Ningbo Institute of Materials Technology and Engineering (NIMTE); Chinese Academy of Sciences; Ningbo 315201 Zhejiang China

2. Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications; Hangzhou 310007 Zhejiang China

3. Advanced Semiconductor Laboratory; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

4. Structural Molecular Imaging Light Enhanced Spectroscopies Lab; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

5. University of Chinese Academy of Sciences; No.19(A) Yuquan Road Shijingshan District Beijing 100049 P. R. China

6. Advanced Micro-Fabrication Equipment Inc.; Shanghai 201201 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201802395/fullpdf

Reference52 articles.

1. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

2. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

3. AlGaN photonics: recent advances in materials and ultraviolet devices

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Refractive Index Engineering as a New Degree of Freedom for Designing High‐Performance AlGaN‐Based Ultraviolet C Light‐Emitting Diodes;Advanced Photonics Research;2023-11-02

2. 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED;Applied Physics Letters;2023-10-30

3. Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation;Optics Letters;2023-09-08

4. Polarity Control in AlGaN and Recent Advances in Lateral-polarity-structure Based Optoelectronic and Electronic Devices;2023 Photonics & Electromagnetics Research Symposium (PIERS);2023-07-03

5. Low temperature photoluminescence study of AlxGa1−xN/GaN/AlxGa1−xN heterostructure nanocolumns;Journal of Materials Science: Materials in Electronics;2023-07