Affiliation:
1. University of Science and Technology of China
2. Jiangsu Xingang Semiconductor Inc.
3. Indian Institute of Technology Roorkee
Abstract
Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 105, and a responsivity of 425.13 mA/W at −10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.
Funder
National Key Research and Development Program of China
Youth Innovation Promotion Association of the Chinese Academy of Sciences
National Natural Science Foundation of China
Science Fund for Distinguished Young Scholars of Zhejiang Province
Subject
Atomic and Molecular Physics, and Optics
Cited by
6 articles.
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