KOH Wet Etching Ga-Polar AlGaN Epilayer for Ultraviolet B Photodetection With Low Dark Current and High Sensitivity-Reference-Cited by-同舟云学术

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KOH Wet Etching Ga-Polar AlGaN Epilayer for Ultraviolet B Photodetection With Low Dark Current and High Sensitivity

Published:2024-05-15 Issue:10 Volume:24 Page:16019-16024
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Dai Yihang¹,Wu Xia¹,Wang Jun¹,Lu De²,Wu Chunyan¹^ORCID,Wang Yan¹,Wang Li¹^ORCID,Zhou Yuxue³,Luo Linbao¹^ORCID

Affiliation:

1. School of Microelectronics, Hefei University of Technology, Hefei, China

2. Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan, China

3. College of Physical Science and Technology, Yangzhou University, Yangzhou, China

Funder

National Natural Science Foundation of China

Key Research and Development Plan of Anhui Province

Natural Science Foundation of Anhui Province

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10530892/10492696.pdf?arnumber=10492696

Reference50 articles.

1. Protection from UV light is an evolutionarily conserved feature of the haematopoietic niche

2. Deep learning-enabled realistic virtual histology with ultraviolet photoacoustic remote sensing microscopy

3. Ultraviolet-radiation-induced methane emissions from meteorites and the Martian atmosphere

4. Endogenous Synergistic Enhanced Self‐Powered Photodetector via Multi‐Effect Coupling Strategy toward High‐Efficiency Ultraviolet Communication

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