Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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3. Investigation on harmonic spur characteristics of hybrid integrated LDMOS and AlGaN / GaN power amplifiers at different temperatures;International Journal of RF and Microwave Computer-Aided Engineering;2020-06-30
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