Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs

Published:2024 Issue: Volume:12 Page:698-702
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Chen Qiang¹^ORCID,Chen Y. Q.²^ORCID,Liu Chang²^ORCID,He Zhiyuan²^ORCID,Chen Yuan²^ORCID,Geng K. W.¹^ORCID,He Y. J.²,Chen W. Y.¹

Affiliation:

1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, Guangdong, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, Guangdong, China

Funder

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10643171.pdf?arnumber=10643171

Reference21 articles.

1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

2. GaN FETs for microwave and high-temperature applications

3. The investigation of AlGaN/GaN HEMT failure mechanisms under different temperature conditions

4. Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

5. Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

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