Author:
Binari Steven C.,Doverspike K.,Kelner G.,Dietrich H.B.,Wickenden A.E.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions
3. 1994 Int. Sym. Compound Semiconductors Proc.;Binari,1995
4. M. A. Khan, Q. Chen, C. Sun and M. Shur, presented at 1995 Topical Workshop on III–V Nitrides.
5. 1994 Int. Sym. Compound Semiconductors Proc.;Doverspike,1995
Cited by
132 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献