Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphine
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Shallow junction doping technologies for ULSI
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3. A novel atomic doping technology for ultra-shallow junction of SOI-MOSFETs
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5. A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient
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