A novel atomic doping technology for ultra-shallow junction of SOI-MOSFETs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall
2. Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping
3. Ultrashallowp‐type layer formation by rapid vapor‐phase doping using a lamp annealing apparatus
4. Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer
5. C.Y. Chang, S.M. Sze, ULSI Technology, McGraw-Hill Series in Electrical and Computer Engineering, 1996, pp. 177.
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