Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance-Reference-Cited by-同舟云学术

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Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance

Published:2017-05 Issue: Volume:62 Page:2-12
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Veloso A.,De Keersgieter A.,Matagne P.,Horiguchi N.,Collaert N.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference82 articles.

1. Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D to 2D perspectives - Traditional and new doping and metrology challenges at the nanoscale;Materials Science in Semiconductor Processing;2023-08

2. Investigation of Common Source Amplifier Circuit using Gate Stack-Based GAA Dopingless Nanowire Field Effect Transistor;ECS Journal of Solid State Science and Technology;2022-08-01

3. Efficient and accurate atomistic modeling of dopant migration using deep neural network;Materials Science in Semiconductor Processing;2022-06

4. Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages;IEEE Transactions on Electron Devices;2022-06

5. A Brief Insight into the Vertical Super-Thin Body (VSTB) MOSFET;Lecture Notes in Electrical Engineering;2022

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