Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy-Reference-Cited by-同舟云学术

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Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy

Published:2009-11 Issue:1-2 Volume:165 Page:9-14
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zielinski M.,Portail M.,Roy S.,Chassagne T.,Moisson C.,Kret S.,Cordier Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE

2. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

3. SiC rapid thermal carbonization of the (111)Si semiconductor‐on‐insulator structure and subsequent metalorganic chemical vapor deposition of GaN

4. Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer

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3. Current transport mechanism of atomic layer deposited ZnO on 3C–SiC/p-Si heterostructure;Solid State Communications;2021-06

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5. Advanced Residual Stress Analysis on the Heteroepitaxial Growth of 3C-SiC/Si for MEMS Application;ECS Transactions;2019-12-16

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