Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach
2. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
3. Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
4. Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
5. From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
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1. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT;Micromachines;2021-10-21
2. Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow;Crystallography Reports;2021-05
3. MBE of III-Nitride Semiconductors for Electronic Devices;Molecular Beam Epitaxy;2019-02-08
4. Ammonia Molecular Beam Epitaxy of III-Nitrides;Molecular Beam Epitaxy;2019-02-08
5. Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon;Journal of Crystal Growth;2019-02
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