Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach
-
Published:2000
Issue:3
Volume:18
Page:1467
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:en
-
Short-container-title:J. Vac. Sci. Technol. B
Author:
Fu Wenning,Venkat Rama
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献