Irradiation-induced defects in SiGe-Reference-Cited by-同舟云学术

Irradiation-induced defects in SiGe

Published:2008-12 Issue: Volume:154-155 Page:85-89
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Larsen A. Nylandsted,Hansen A. Bro,Mesli A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. see e.g. G.D. Watkins, in: Electronic Structure and Properties of Semiconductors. Edited by R.W. Cahn, P. Haasen and E. J. Kramer. Materials Science and Technology: A comprehensive treatment, Vol. 4, 1991, 105.

2. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

3. Recent advances with SiGe heterojunction bipolar transistors

4. Near-band-gap photoluminescence of Si-Ge alloys

5. Growth and characterization of compositionally graded, relaxed Si1-xGex

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