Investigation of the relaxation behavior of Si1−xCx alloys during epitaxial UHV-CVD growth-Reference-Cited by-同舟云学术

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Investigation of the relaxation behavior of Si1−xCx alloys during epitaxial UHV-CVD growth

Published:2008-12 Issue: Volume:154-155 Page:90-94
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ostermay I.,Kammler T.,Naumann A.,Bartha J.W.,Kücher P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Sidewall Dislocations in Embedded SiGe Source/Drain Areas of MOSFETs and Their Impact on the Device Performance

2. Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices

3. Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology

4. Concentration and Behavior of Carbon in Semiconductor Silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD;ECS Journal of Solid State Science and Technology;2017

2. Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping;Journal of Crystal Growth;2015-09

3. In-Situ P Doped Epitaxial Si_1−xC_x Growth Under UHV-CVD;Journal of Nanoscience and Nanotechnology;2014-10-01

4. Material Studies on Si:C Epitaxial Films Grown by CVD;ECS Transactions;2014-08-12

5. Enhancing epitaxial SixC1−x deposition by adding Ge;Thin Solid Films;2010-03

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