Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology

Abstract

We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on sidewall of the recessed area is observed compared to that on the recessed bottom, that causes a non-flat film surface profile.