Analysis of donor–acceptor pairs and titanium related luminescence in different compensated 6H–SiC single crystals-Reference-Cited by-同舟云学术

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Analysis of donor–acceptor pairs and titanium related luminescence in different compensated 6H–SiC single crystals

Published:2010-06 Issue:1-3 Volume:170 Page:139-142
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Huang Wei,Chen Zhi-zhan,Chang Shao-hui,Li Zheng-zheng,Shi Er-wei

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Commercial SiC device processing: Status and requirements with respect to SiC based power devices

2. High power photoconductive switches of 4H SiC with Si3N4 passivation and n+ -GaN subcontact

3. IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008;James,2008

4. ON-State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide

5. Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

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1. Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates;Journal of Electronic Materials;2024-03-06

2. In situ luminescence measurement of 6H-SiC at low temperature*;Chinese Physics B;2020-03-01

3. Recent progress in research of f-SiC codoped with N–B–Al pairs for optoelectronics;Journal of Semiconductors;2015-08

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