High power photoconductive switches of 4H SiC with Si3N4 passivation and n+ -GaN subcontact
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
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1. Influence of Pinch Effect on the Lifetime of a 2MW Silicon Carbide Photoconductive Semiconductor Switch;IEEE Transactions on Electron Devices;2024-03
2. Si3 N4 Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN;IEEE Transactions on Electron Devices;2023-03
3. Breakdown behavior of SiC photoconductive switch with transparent electrode;AIP Advances;2022-08-01
4. A new rear-illuminated vanadium-compensated 4H-SiC photoconductive switches with AlN anti-reflection coating;Journal of Physics: Conference Series;2020-04-01
5. Current status of modelling the semi-insulating 4H–SiC transient photoconductivity for application to photoconductive switches;Opto-Electronics Review;2017-09
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